青云翻译

In n-type inp substrate, the first form sio2 film, and then use the epitaxial growth technique to ingaasp active layer growth on a substrate, p-type inp for cladding, with electrodes on its surface. As the soa of the waveguide structure and materials used in the impact of the gain, making soa with p

In n-InP substrate, formation of SiO2 film, and then use the active layer InGaAsP epitaxial growth technology growth on the substrate, p-type InP blanket, fitted with electrodes on its surface. Because SOA waveguide structure and the influence of gain of material, makes SOA polarization dependence,

In n on the InP foundation plate, forms the SiO2 membrane first, then the use extension growth technology grows the InGaAsP emission coating on the foundation plate, p InP makes the envelope, its surface is loaded with the electrode.Because the SOA wave guide structure and uses the gain material inf

The N-type InP substrate SiO2 film on a first-come-first-served basis, and then use InGaAsP reactive layer epitaxial growth techniques to grow on the base plate, p-type cladding, InP made its surface equipped with electrodes. SOA because the waveguide structure and the gains of the impact of materia

In n-InP substrate, formation of SiO2 film, and then use the active layer InGaAsP epitaxial growth technology growth on the substrate, p-type InP blanket, fitted with electrodes on its surface. Because SOA waveguide structure and the influence of gain of material, makes SOA polarization dependence,