青云翻译

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Removal of edges of PN junction with nitric acid and hydrofluoric acid etching to prevent short circuit. By chemical etching, chemical reactions generate six fluorosilicic acid soluble complexes to remove non-knot on the surface forming a layer of phosphorus and silicon wafer after glass, improving

正在翻译，请等待...

正在翻译，请等待...

Removal of edges of PN junction with nitric acid and hydrofluoric acid etching to prevent short circuit. By chemical etching, chemical reactions generate six fluorosilicic acid soluble complexes to remove non-knot on the surface forming a layer of phosphorus and silicon wafer after glass, improving