青云翻译

亚微米级碳化硅粉体通常包括在其结构中的层错。 “reichweite”R = 4使用矩阵强度方程法的基础上计算的X-射线粉末衍射线，包括碳化硅层错

Submicron SiC powders commonly include stacking faults in their structure. The X-ray powder diffraction profiles of SiC including the stacking faults were calculated on the basis of “reichweite” R =4 using the matrix intensity equation method

Submicron SiC powders commonly include stacking faults in their structure. The X-ray powder diffraction profiles of SiC including the stacking faults were calculated on the basis of “reichweite” R =4 using the matrix intensity equation method

Submicron SiC powders commonly include stacking faults in their structure, The X-ray powder diffraction profiles of SiC including the stacking faults were calculated on the basis of "reichweite " R = 4 using the matrix intensity equation method

Submicron SiC powders commonly include stacking faults in their structure. The X-ray powder diffraction profiles of SiC including the stacking faults were calculated on the basis of “reichweite” R =4 using the matrix intensity equation method